Abstract
Plasma doping and laser annealing are successfully integrated into the conventional p-metal–oxide–silicon field effect transistor (PMOSFET) process to form ultra shallow junction (USJ). Comparing with the conventional combination of ion implantations and rapid thermal annealing (RTA), junction depth (XJ) and sheet resistance (RS) are reduced. Also, significant improvement of the short channel effects without the degradation of on-current is observed.
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