Abstract
We have investigated boron cluster implantation for ultra-shallow junction formation in transistors with gate lengths of ∼60nm. The use of large boron containing clusters is more advantageous than B+ or BF2+ implantation from the viewpoint of throughput and energy contamination. Ion implantation of B18HX+ cluster ions, produced by ionizing B18H22 (octadecaborane) vapor, was employed to fabricate the p-type SDE (source/drain extensions) of pMOSFETs. B18HX+ implants with the energy and dose adjusted to produce equivalent projected range and B concentration as compared to conventional B+ implants were carried out using a traditional implanter retrofitted with a SemEquip ClusterIon® Source. The results on blank wafers and transistor performance on test pattern wafers were compared to standard monomer B+ implants.Analysis of the blank wafers indicated that B18HX+ showed the same or better characteristics than B+ in junction depth and sheet resistance. Post-processing electrical measurements of the pMOSFETs implanted with B18HX+ showed that they performed with nearly identical characteristics as ones implanted with B+.
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