Abstract
The application of nano materials to control advanced functionality in semiconductor devices has reached the atomic scale. At this dimension the exact chemical and structural composition of a device is crucial for its performance. Rapid inspection techniques are required to find the optimal combination among numerous materials. However, to date the earliest electrical inspection is carried out after multiple fabrication processes. This delay makes the fabrication of atomically designed components very challenging. Here, we propose a sample system to chemically characterize nanoscale devices in-operando. We introduce ion-implanted contacts which embedded in the sample serve as additional electrodes to carry out scanning gate experiments. We demonstrate that the presence of these electrodes does not deteriorate the surface quality. The potential of this approach is highlighted by controlling the charge state of single dangling bonds on the silicon surface. Apart from our novel sample holder, the experimental setup was not modified making this approach compatible to most commercial low-temperature scanning probe microscopes. For silicon based devices, the versatility of this method is a promising avenue to gain a detailed and rapid understanding of functionalized atomic devices and quantum interactions at the atomic level.
Highlights
The application of nano materials to control advanced functionality in semiconductor devices has reached the atomic scale
For this reason it is usually impossible to characterize nano-devices in operation with conventional scanning probe microscopes. These restrictions of the experimental setup have been addressed by multi-tip scanning tunneling microscopes demonstrating the immense experimental capabilities that arise from additional electrodes for the investigation of electronic, magnetic and mechanical effects of nano-devices[8]
Because of the low diffusion rate of antimony the ionimplanted structures are expected to withstand the high-temperature treatment necessary to prepare a clean and flat Si(001) surface[26]. More importantly these rapid-thermal anneal (RTA) steps promote Sb dopants to diffuse towards the s urface[26]
Summary
The application of nano materials to control advanced functionality in semiconductor devices has reached the atomic scale. Scanning probe microscopy (SPM), with its outstanding spatial resolution, is sensitive to both the structural composition as well as the electrical properties of the material, the experimental capabilities are limited by the vertical arrangement of the junction between tip and sample[6,7] providing only one out-of-plane electrode to study complex nano scale devices. For this reason it is usually impossible to characterize nano-devices in operation with conventional scanning probe microscopes. Apart from a specially designed sample holder, the experimental setup was not modified, making this approach compatible to most commercial low-temperature SPMs
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