Abstract

Mask writers and large area measurements systems are key systems for production of large liquid crystal displays (LCD) and image devices. With position tolerances in the sub-µm range over square meter sized masks, the metrology challenges are indeed demanding. Most systems used for this type of measurement rely on a microscope camera imaging system, provided with a charge coupled device, a complementary metal-oxide–semiconductor sensor or a time delay and integration sensor to transform the optical image to a digital gray-level image. From this image, processing algorithms are used to extract information such as location of edges. The drawback of this technique is the vast amount of data captured but never used. This paper presents a new approach for ultra-high-precision lateral measurement at nm-levels of chrome/glass patterns separated by centimeters, so called registration marks, on masks used for the LCD manufacturing. Registration specifications demand a positioning accuracy <200 nm and critical dimensions, i.e. chrome line widths, which need to be accurate in the 80 nm range. This accuracy has to be achieved on glass masks of 2.4 × 1.6 m2 size. Our new measurement method is based on nm-precise lateral scanning of a focused laser beam combined with statistical random phase sampling of the reflected signal. The precise scanning is based on an extremely accurate time measuring device controlling an acousto optic deflector crystal. The method has been successfully applied in measuring the 4 µm pitch of reference gratings at standard deviations σ of 0.5 nm and registration marks separated by several cm at standard deviations of 23 nm.

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