Abstract
We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grownby a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at400 °C without major changes in their morphology, thus enabling an AlGaAs capping layer to begrown at that temperature. Consequently, we demonstrate a fourfold reduction of thelinewidth of the emission together with an increased recombination lifetime, compared tothe conventional droplet epitaxial QDs. The averaged linewidth of neutral excitonsmeasured by micro-photoluminescence on single quantum dots was around 35 µeV.
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