Abstract
In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the process of O2 plasma treatment, GaON was formed on the surface of GaN and further modified the surface potential of the material surface, which made the VON decrease from 0.62 to 0.37 V. Spin-on-glass was deposited on top of devices to form the floating guard ring, which was used to improve the breakdown voltage to 681 V (at J = 1 A/cm2) by reducing the electric field distribution. The vertical GaN SBDs exhibit a specific on-resistance (RON) of 2.6 mΩ cm2. Deterioration of the device under different stress time changes slightly showed great stability of the devices.
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