Abstract
A larger ratio of conduction-band offset to valence-band offset is the unique character for Mg(x)Zn(1-x)O alloys. For this reason, it is feasible to build a quasi-electric forces, caused by the spatial gradient of the conduction edge, exerting on the electrons. In this paper, a novel graded band gap cubic-MgZnO-based solar-blind photodetector is successfully fabricated from Graded-Band-Gap-Cubic-MgZnO/i-MgO/p-Si heterojunction, via changing stoichiometry spatial gradient. Due to quasi-electric fields in non-uniform MgZnO, the multiple carriers are generated under ultra-low threshold bias voltage. The photodetector showed high performance, namely, high responsivity, quantum efficiency, high sensitivity and selectivity towards the solar-blind spectrum, and fast response times.
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