Abstract
Solid-phase crystallization (SPC) of amorphous-GeSn (a-GeSn) films on insulating substrates has been developed combining with laser-anneal seeding, to realize next generation thin-film devices. By this technique, we have realized crystallization of GeSn (>10%) at low temperatures (~180oC), which is applicable to flexible thin-film devices on low cost plastic substrates with low softening temperatures (~200oC). In addition, the starting point of crystallization can be controlled by seeding, which is a big advantage in circuit designing.
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