Abstract
The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p+-GaSb/n+-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 × 10−7Ω cm2. This value is nearly ten times better than previously reported best values.
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