Ultra-low reflection loss for silicon nanowire-array-textured based photovoltaic devices

Abstract

A two-step, metal-assisted, electroless etching technique based on the sputtering of silver particles is described, using phosphorus silicate glass, doping, and screen printing processes to fabricate photovoltaic devices. Si-NW arrays on pyramid surfaces show a low reflectivity of ∼1.11%, while the average length of the Si-NW arrays is ∼375nm, with an aspect ratio of ∼5.4. Superior photovoltaic characteristics of the PCE (∼10.26%) with a Jsc of 28.2mA/cm2 and a Voc of 540mV are achieved. Power conversion efficiency shows a dependence on shunt resistance while the series resistance and the NWs aspect ratio are respectively below 2.41Ω and 10.