Ultra low power inductorless low noise amplifier: Comparison of FDSOI technologies

Jennifer Zaini,Patrick Audebert,Dominique Morche,Thierry Taris,Frederic Hameau

doi:10.1109/s3s.2017.8309257

Ultra low power inductorless low noise amplifier: Comparison of FDSOI technologies

Jennifer Zaini, Patrick Audebert + Show 3 more

https://doi.org/10.1109/s3s.2017.8309257

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Publication Date: Oct 1, 2017

Citations: 1

Affiliation: University of Bordeaux, Institut Polytechnique de Bordeaux, CEA LETI, CEA Grenoble, Atomic Energy and Alternative Energies Commission

#Inductorless Low Noise Amplifier #Fully-Depleted Silicon-On-Insulator + Show 8 more

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Abstract

This paper exploits the benefits of the body biasing on the design of an Ultra Low Power (ULP) inductorless Low Noise Amplifier (LNA) working at 2.4GHz. A comparison of two Fully-Depleted Silicon-On-Insulator (FDSOI) technologies: STMicroelectronics 28 nm UTBB FDSOI Technology and Global Foundry 22 nm FDX® Technology is proposed. The results in terms of Gain (S21), Noise Figure (Nf), Input Matching (S11) and power consumption of the LNA for the two technologies are presented. The simulated results shows the advantages of using the body biasing to lower significantly the power consumption of an Integrated Circuit (IC) block.

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