Abstract
AbstractThe primary beam energy and species (Cs+, Ar+) dependence of ultra low energy SIMS depth profiles of ultra‐shallow boron implants into CVD grown diamond is investigated in this paper. The data are compared with TRIM simulation of the 5 keV 11B+ implant. Cs+ profiles (1 keV, 30°) appear to be seriously distorted by atomic mixing and recoil implantation due to the high mass of the probe. Ar+ profiles (300 eV–1 keV, 0°) are less distorted, but both Cs+ and Ar+ tend to produce significant tails. The Ar+ SIMS profiles produce implants which appear to be shallower than the TRIM simulation. We show that profiling using Ar+ with energies between 0.3 and 1 keV can be used to extrapolate a profile to zero beam energy. The extrapolated data indicate a centroid between 5 and 10 nm from the surface, whereas TRIM predicts 11 nm. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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