Abstract
The Power Pack IGBT has been tested in detail under several practical inverter systems and has obtained much useful data. Using this data and advanced technology, we have improved some items and finally developed an ultra high-power 2.5 kV-1800 A Power Pack IGBT (flat-packaged Reverse Conducting IGBT). One of the important improvements is the contact technology for the IGBT chip, and another is the electric discharge capability of the IGBT and diode chips. In addition to these important improvements, using our original 27.5/spl times/27.5mm/sup 2/ large IGBT and diode chips, and square flat package structure, we have achieved a compact and powerful device. The saturation voltage is 4.5 V at the collector current of 1800A and Tj=125/spl deg/C. The on-state voltage of the diode part is 3.5 V at the anode current of 1800 A and Tj=125/spl deg/C. The turn-off capability is over 4000A at the peak collector voltage of 2400 V. In this paper, the device structure, the chip technology, the parallel connection technology inside the package, the high blocking voltage capability, and other important experimental results are described.
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