Abstract
Ultra-high throughput MBE growth of very pure and extremely uniform GaAs and (AlGa)As layers with excellent surface morphology can be realized using a newly developed MBE system. High throughput can be achieved by the combination of the simultaneous growth of seven 2 inch or three 3 inch epiwafers and of the automatic growth operated continuously day and night, without accelerating growth rates. The surface defect density has been reduced to the allowable level even for GaAs microwave monolithic ICs. Hall mobilities 1 × 10 5 cm 2/V · s at 77 K were routinely obtained from slightly Si-doped GaAs layers. The microwave devices fabricated from the epiwafers grown by this system showed excellent performance.
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