Abstract
Small grain size is one of the main obstacles for preparing high efficiency Cu2ZnSnS4 (CZTS) photovoltaic devices. The high thermal energy (high annealing temperature) is used to facilitate the driving force of grain growth. In this paper, the CZTS thin films were synthesized by means of sulfurizing oxide-precursors at relatively high sulfurization temperatures (550–700 °C). The effect of sulfurization temperature on properties of CZTS thin films was investigated through XRD, Raman, SEM, and energy dispersive x-ray spectroscopy. Both the crystallinity of the CZTS films and the size of their grains were greatly enhanced, which is attributed to the acceleration of atomic inter-diffusion during the growing process of thin films under ultra-high temperature.
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