Abstract
Ultra high-speed characterization of crystalline quality in non-passivated multicrystalline Si wafers and ingots was demonstrated by photoluminescence (PL) imaging with the samples immersed in a HF solution. We confirmed that the present technique has about ten times higher spatial resolution and ten thousand times faster rapidity than those of conventional electrical characterization methods, and that strong correlations of the results between the present and conventional techniques were obtained. These results show clearly that the present technique is a powerful tool for characterizing the accurate bulk property of non-passivated wafers and ingots.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
