Ultra-high responsivity (>12.34 kA W−1) of Ga–In bimetallic oxide nanowires based deep-UV photodetector

Abstract

This work demonstrates the application of bimetallic oxide nanowires (NWs) for deep UV-photodetectors. The Ga–In based NWs have been fabricated using a low cost and scalable electrospinning method. The fabrication process includes the synthesis of NWs on cleaned quartz substrates using electrospinning, followed by Al (100 nm)/Au (20 nm)-electrode deposition on top of the fine sheet of NWs. Due to the very large surface to volume ratio, high porosity, photon trapping and simultaneous front and back illumination, the fabricated bimetallic photodetector demostrates a record ultra-high responsivity and the photo-dark current ratio of ~12 348 AW−1 and ~298 846 at 1 V bias respectively. The device has further revealed high detectivity ~3.27 × 1015 mHz0.5 W−1 and external quantum efficiency ~7.73 × 106%.