Abstract
Mix-phase MgZnO thin films with different structure constitutions are deposited under different temperature with Mg0.35Zn0.65O target by PLD method. Through study on the UV response characteristics of mix-phase MgZnO with different structure constitutions, mix-phase MgZnO detector with relative higher solar-blind UV response (3 × 103A/W at 250 nm @ 25V) and high Iuv signal at solar-blind UV light (0.848 mA at 140 mW/cm2 254 nm @25V) is made with suitable c-MgZnO/h-MgZnO ratio. The internal quasi-tunnel breakdown mechanism between c-MgZnO and h-MgZnO within the mix-phase MgZnO thin film, introduced much higher deep UV response of the mix-phase MgZnO detector than previous reported MgZnO detectors, the deep UV response of the mix-phase MgZnO detector is also higher than single crystal Ga2O3 based MSM detector that deposited at 800 °C high temperature. In addition, the Iuv of the simple MSM structure device MgZnO detector at faint solar-blind UV light, is nearly the same as some heterojunction devices that made with complicated device technology and high temperature condition. Therefore, mix-phase MgZnO with suitable c-MgZnO/h-MgZnO is a solar-blind UV sensitive material in high performance deep UV detectors.
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