Ultra-high photoresponsive photodetector based on ReS2/SnS2 heterostructure

Abstract

Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance. The response speed of single ReS2 photodetector is slow exceptionally, the heterostructure could improves the response speed of ReS2-based photodetector, but the photodetectors responsivity is reduced greatly, which restricts the development of ReS2. In this paper, a vertically structured ReS2/SnS2 van der Waals heterostructure photodetectors is prepared, using ReS2 as the transport layer and SnS2 as the light absorbing layer to regulate the channel current. The device has an ultra-high photoconductive gain of 1010, which exhibits an ultra-high responsivity of 4706 A/W under 365-nm illumination and response speed in seconds, and has an ultra-high external quantum efficiency of 1.602×106% and a high detectivity of 5.29×1012 jones. The study for ReS2-based photodetector displays great potential for developing future optoelectronic devices.