Ultra-high performance hafnium-based capacitors: Synergistic achievement of high dielectric constant and low leakage current

Abstract

The relationship between the dielectric constant and leakage current of materials often exhibits a negative correlation. However, to sustain Moore's Law, the semiconductor industry necessitates novel materials that simultaneously possess a high dielectric constant and low leakage current, meeting the shrinking demands of electronic components. In this study, a high-performance hafnium-based thin film capacitor achieved through the collaborative effects of bottom electrode engineering and ion doping. Tungsten (W) as the bottom electrode, with its chemically inert nature and low thermal expansion coefficient, proves advantageous in improving interface quality and promoting the generation of the high-k phase in HfO2. Concurrently, yttrium (Y) ion doping contributes to stabilizing the high-k phase of HfO2, reducing non-lattice oxygen, and enhancing the disorderliness of the dielectric thin film. By synergistically integrating these factors, the hafnium-based thin film capacitor achieves a high dielectric constant of 36.6 while maintaining minimal leakage current (Electric field ∼ 6 MV/cm, J ∼ 10−8 A/cm2) and a high charge storage capacity (Urec ∼ 104.4 J/cm³). These research findings open a promising pathway for the development of novel hafnium-based materials with broad applicability and exceptional dielectric performance.