Abstract
In this paper, we have introduced and investigated an integrated optoelectronic chip for the up-conversion of mid-infrared to visible light. A thin layer of the nanocrystalline photoconductive PbSe is put on the Base of the NPN bipolar junction transistor and a doped phosphorescence organic light-emitting diode is placed on the Collector contacts. The incoming mid-infrared light is converted into an electric current by quantum dot photodetector, then amplified by the NPN bipolar junction transistor, and finally, the amplified current is driven through the Collector in the organic light-emitting diode. The organic light-emitting diode is designed to emit a green color. Our findings indicated that the proposed devices provide an up-conversion process from mid-infrared to visible light with a high-efficiency rate. The quantum dot photodetector is designed to detect 3 μm and also the organic light-emitting diode works at 523 nm. It is easy to tune the 3 ~ 5 μm incoming light by tuning the PbSe quantum dots, and the output light is tuned by tuning the organic light-emitting diode structure. Thus, the proposed structure is highly flexible regarding receiving mid-infrared and generating visible light. It is concluded that the external quantum efficiency for the proposed structure for 3 μm to 523 nm is 600. Also, the enhancement of the transistor current gain (β) can further increase the conversion efficiency of the proposed device. Moreover, different structures such as Darlington can be used instead of the bipolar junction transistor to enhance conversion efficiency.
Highlights
In this paper, we have introduced and investigated an integrated optoelectronic chip for the upconversion of mid-infrared to visible light
The nanocrystalline PbSe can absorb incoming MIR light and generate photo carriers that are amplified by a Transistor and it is injected into the OLED to emit visible light that is visible to the normal vision
As shown in this figure, the MIR absorption part is a thin layer of PbSe quantum dot (QD) that grown on the substrate ZnS and this layer connected to the Transistor base
Summary
We have introduced and investigated an integrated optoelectronic chip for the upconversion of mid-infrared to visible light. The incoming mid-infrared light is converted into an electric current by quantum dot photodetector, amplified by the NPN bipolar junction transistor, and the amplified current is driven through the Collector in the organic light-emitting diode. Our findings indicated that the proposed devices provide an up-conversion process from mid-infrared to visible light with a high-efficiency rate. Liu et al introduced a NIR to visible light up-conversion device by integrating a light-emitting diode (LED) with an IR photodetector (IRPD)[13,16,17,18,19]. Kim et al reported all-organic NIR-to-visible up-conversion devices with an SnPc: C60 layer as NIR sensitizer and a CBP(Irppy3) layer as a phosphorescent emitter[23] This up-conversion device has a higher QE (2.7%W/W) than the previous methods due to the high efficiency of the OLED and PD24,25. These devices are not sensitive to more than 1 μm[23]
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