Abstract
The antimony-doped half-Heusler thermoelectric bulk TiNiSb0.05Sn0.95 was prepared via ultra-fast 4.5 min microwave synthesis, cold-press forming and 20 min microwave pressureless sintering. The electrical properties i.e. the Seebeck coefficient (S), electrical resistivity (ρ), and carrier concentration (n) and mobility (μ) were measured on a Seebeck coefficient/resistance analysis system (S/RAs) and Hall effect measurement system (HEMS), respectively. The thermal conductivity (κ) was measured on a laser flash thermal analyzer (LFA). The results show that a high purity single phase was obtained after microwave sintering. The electrical resistivity is 2.70-5.33 μΩ m at temperatures ranging from ∼300 to 773 K. The highest power factor of 4042 μW m-1 K-2 was achieved at 473 K. The microstructure analyses show that numerous circular intercrystalline pores caused by microwave sintering are present within the TiNiSn grains. The lattice and total thermal conductivity are 1.76-3.77 and 4.66-5.98 W m-1 K-1. The highest thermoelectric figure of merit of 0.44 was achieved at 623 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
