Abstract
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.
Highlights
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications
InxGa1−xSb NWs are synthesized by the two-step solid-source chemical vapor deposition (CVD) method[28]
The chemical composition of the obtained NWs could be evaluated by using energy dispersive X-ray spectroscopy (EDS), where they are found to be In0.15Ga0.85Sb, In0.22Ga0.78Sb, In0.09Ga0.91Sb, and In0.28Ga0.72Sb for the source mixture ratio (InSb:GaSb in wt.%) of 10:1, 20:1, 30:1, and 40:1, respectively
Summary
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. III-V nanomaterials, such as nanowires (NWs), have been demonstrated with intriguing physical and chemical properties originating from their onedimensional configuration[2] In this regard, various methods have been explored for the synthesis of high-quality IIIV NWs, including chemical vapor deposition (CVD)[3,4,5], metalorganic CVD6,7, laser ablation[8] and molecular beam epitaxy (MBE)[9], etc. InGaSb gives the higher hole mobility than GaSb and InSb12 It is still a substantial technological challenge to achieve large-scale and highly crystalline ternary III−V NWs in a controllable and low-cost manner[13,14,15].
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