Abstract
We propose an ultra-broadband near- to mid-infrared (NMIR) tunable absorber based on VO2 hybrid multi-layer nanostructure by hybrid integration of the upper and the lower parts. The upper part is composed of VO2 nanocylinder arrays prepared on the front illuminated surface of quartz substrate, and VO2 square films and VO2/SiO2/VO2 square nanopillar arrays prepared on the back surface. The lower part is an array of SiO2/Ti/VO2 nanopillars on Ti substrate. The effects of different structural parameters and temperature on the absorption spectra were analyzed by the finite-difference time-domain method. An average absorption rate of up to 94.7% and an ultra-wide bandwidth of 6.5 μm were achieved in NMIR 1.5–8 μm. Neither vertical incident light with different polarization angles nor large inclination incident light has a significant effect on the absorption performance of the absorber. The ultra-broadband high absorption performance of this absorber will be widely used in NMIR photodetectors and other new optoelectronic devices.
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