Abstract
An electron beam evaporator for in-situ reflection electron microscope study of homoepitaxial growth of Si was newly constructed and was attached to an ultra-high vacuum electron microscope. Growths in the step flow mode and the two-dimensional island nucleation and growth mode were observed. Nucleation at out-of-phase boundaries and that of the 5×5 structure on (111) surface were noticed. Changes of surface morphology corresponding to the RHEED intensity oscillation were observed directly.
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