Abstract
AbstractThe WSe2(0001)/I2semiconductor/electrolyte interface was simulated in Ultra‐high‐Vacuum (UHV) by adsorbing I2onto the van der Waals plane of the layered substrate at 100 K. The interface was characterized by photoelectron spectroscopy and surface photovoltage measurements. The interaction proved to be non‐reactive and I2adsorbs as molecular species. The electric potential distributions measured by UPS und XPS are in reasonable agreement to semiconductor/electrolyte interfaces. Iodine behaves as electron acceptor inducing strong band bending only for n‐doped and not for p‐doped samples. After correcting for source‐induced surface photovoltage effects the 2σulevel (LUMO) of adsorbed I2is identified of being responsible for establishing electronic equilibrium.
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