Abstract

In this paper, a new, analytical model for subthreshold leakage estimation in the ultra deep submicron (UDSM) realm is proposed. Most previous attempts at subthreshold leakage estimation in transistor stacks are not tailored for the UDSM realm and are based on either a look up table approach, and/or assume that all the transistors in the stack have a fixed width. The analytical estimation model proposed in this paper is capable of estimating subthreshold leakage in UDSM NMOS transistor stacks with different transistor widths. The model achieves this by estimating the stack nodal voltages. In this paper, transistor stacks of two, three and four transistors are considered.Compared to SPICE simulations using PTM's BSIM4 models, our analytical model achieved an average error of 8.1% for the one, two, three and four transistor stacks for 65, 45 and 32nm CMOS process technologies. The model also exhibits significant runtime savings when compared with SPICE.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.