Abstract
We theoretically investigated the electrical manipulation of hole g‐factor by switching the band alignments of a hybrid quantum well, made out of compressive layer and tensile strained layer. Since heavy‐hole and light‐hole are mainly confined to the compressively strained layer and tensile strained layer, respectively, we can switch the major band character and g‐factor of upper hole states by external electric fields. And we showed that the signs of the g‐factors can also be manipulated by controlling the hole mixing with magnetic fields.
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