Abstract
ABSTRACT The authors report the most recent advances in type II InAs/GaSb superlattice materials and photovoltaic detectors. Lattice mismatch between the substrate and the superlattice has been routinely achieved below 0.1%, and less than 0.0043% as the record. The FWHM of the zeroth order peak from x-ray diffraction has been decreased below 50 arcsec and a record of less than 44 arcsec has been achieved. High performance detectors with 50% cutoff beyond 18 m up to 26µm have been successfully demonstrated. The detectors with a 50% cut-off wavelength of 18.8 µm showed a peak current responsivity of 4 A/W at 80K, and a peak detectivity of 4.5×10 10 cm Hz 1/2 /W was achieved at 80K at a reverse bias of 110mV under 300K 2 FOV background. Some detectors showed a projected 0% cutoff wavelength up to 28µm~30µm. The peak responsivity of 3 Amp/Watt and detectivity of 4.25×10 10 cm×Hz 1/2 /W was achieved under 40mV reverse bias at 34K for these detectors. Keywords: Type II, InAs/GaSb, superlattices, photovoltaic
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
