Abstract
In this paper, the results of Hg 1−xZn xTeCdTe strained layer superlattices grown by MBE are reported, and compared to Hg 1−xCd xTeCdTe superlattices. Both Type III and Type I Hg 1−xZn xTeCdTe superlattices with different strain have been grown on CdTe(111)B/GaAs(100) and CdTe(100)/GaAs(100) substrates and characterized by electron, X-ray diffraction, infrared transmission and Hall measurements. The values of hole mobility between 5×10 3 up to 2×10 4cm 2v −1s −1 at T = 23K along (111)B growth orientation and up to 4.9×10 4cm 2v −1s −1 at T = 5K along (100) growth orientation are obtained for Type III superlattices whereas in Type I superlattices, the hole mobility is between 200–300cm 2v −1s −1. This drastic change in the hole mobility between Type III and Type I superlattices along with the role of the strain are discussed in this paper.
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