Abstract
Optical properties of ZnS0.78Te0.22/ZnTe single quantum wells grown on GaAs (100) substrates by hot wall epitaxy technique with varying the ZnS0.78Te0.22 well width from 0.3 to 1.8 nm were investigated by photoluminescence (PL) measurements at low temperature and by temperature-dependent PL measurements. PL results show the evidence of type-II transition and their peak energy shifts to higher energies as the ZnS0.78Te0.22 well width decreases. In addition, temperature-dependent PL measurements show the increase of the activation energy as the well thickness decreases, indicating the increase of confinement effect. This study makes it possible to introduce proper band diagram for this structure, and can give very useful information on their device applications.
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