Abstract
We fabricated p+-GaAs/n-Si and n+-GaAs/p-Si junctions by using surface activated bonding and measured their current-voltage and capacitance-voltage characteristics at room temperature. Their conduction band offset, which was extracted from the capacitance-voltage characteristics, was 0.57-0.84 eV. The results suggested that the band profiles of junctions had type-II features, which was likely to be preferable for fabricating low-resistance tunnelling junctions in hybrid tandem cells. The influence of possible interface states on the electrical properties of junctions was also discussed using the charge neutral level model.
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