Abstract
The band offset parameters of low-boron-content BGaN/GaN heterojunctions have been studied using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) in BxGa1−xN epilayers (x ⩽ 0.043) grown on GaN/sapphire and AlN/sapphire templates. A staggered-gap (type-II) band alignment has been identified at the BGaN/GaN heterojunction by XPS. A study of the red shift of deep-level-related yellow PL band and the band gap shrinkage of BGaN epilayers with increasing boron content confirmed the type-II band alignment and enabled us to estimate that the ratio of the conduction-to-valence band discontinuity is 57:43. It is also shown that the band gap bowing of the BGaN alloy system is accommodated in the conduction band.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
