Abstract
Heavy ion (erbium, 167Er) MeV implantation and annealing of thick epitaxial layers of n-type GaAs has been found to result in the conversion of a surface layer within the erbium profile to p-type. Similar effects in originally p-type and undoped, high resistivity layers are not observed. In addition, no active role is ascribed to the erbium in providing mobile holes. The source of the type conversion is attributed to the transfer of Si Ga donors to Si As acceptor sites as the result of the implantation and annealing.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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