Type and charge states of point defects in heavily As- and B-doped silicon

Abstract

In order to determine the type and charge states of dominant point defects in As- and B-doped silicon, self-diffusion in doped natural Si/ 30Si/natural Si double-heterostructures has been investigated under oxidizing ambient. Enhanced self-diffusion is observed in B-doped Si, while retarded self-diffusion is observed in As-doped Si. These results indicate that single-charged Si self-interstitals (I + donors) are dominant in B-doped Si, while excess single-charged vacancies (V − acceptors) exist in As-doped Si.