Abstract
The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell's wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations were obtained in the condition of small signal and the total intensity is far below the saturation intensity of the amplifier. The results show that when the amplifier is operated below transparency we obtain an increase in the optical gain, and when the amplifier is operated above transparency we obtain a decrease in the optical gain. The experimental results obtained in an 810 nm, 200 microm wide GaAlAs amplifier show good agreement with the theory. A diffusion length of 2.0 microm is determined from the experiment.
Highlights
Nonlinear four-wave mixing in narrow-stripe and broad-area semiconductor lasers is of interest as a method to obtain high phase conjugate reflectivity.[1,2]
Two-wave mixing (TWM) has been intensively investigated in photorefractive materials,[7] only few works was done in gain media.[8]
The analytical solutions to the coupled-wave equations were obtained in the condition of small signal and the total intensity is far below the saturation intensity
Summary
Nonlinear four-wave mixing in narrow-stripe and broad-area semiconductor lasers is of interest as a method to obtain high phase conjugate reflectivity.[1,2] The nonlinear wave mixing can be used to measure carrier dynamics and gain behavior directly in the device, as well as for understanding device physics and application.[3,4,5] Recently, we suggested that the gain and index grating created in broad-area semiconductor amplifier by four-wave mixing may be used to produce novel diode laser systems with better beam quality.[6] two-wave mixing (TWM) has been intensively investigated in photorefractive materials,[7] only few works was done in gain media.[8] To our knowledge, this is the first time that the influence of the TWM grating on the optical gain is investigated in broad-area semiconductor amplifier We present both the theoretical and experimental results of TWM in broad-area diode amplifier.
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