Abstract
For the negative-U (two-electron) model of DX centers in III-V semiconductors the carrier exchange between the DX states and the conduction band must occur via an intermediate, thermodynamically unstable, one-electron D0 state (D−⇆ D0+e−⇆ D++2e−). In this review the experimental evidence for the existence of such an intermediate state is presented for the case of the DX(Te) centres in Al x Ga 1−x As and DX(S) in GaSb . The intermediate state of the process is strongly coupled to the lattice in the same ways as the ground state.
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