Abstract
The two-state lasing phenomenon, which manifests itself in simultaneous laser emission through several optical transitions of quantum dots, is studied in microdisk diode lasers with different cavity diameters. The active region represents a multiply stacked array of self-organized InAs/InGaAs/GaAs quantum dots emitting in the wavelength range of 1.1–1.3 µm. Two-state lasing, which involves the ground-state and the first excited-state optical transitions, is observed in microdisks with cavity diameters of 20 to 28 µm, whereas two-state lasing via the first and the second excited-state optical transitions is observed in 9 µm microdisks. The threshold currents for one-state and two-state lasing are investigated as functions of the microdisk diameter. Optical loss in the microdisk lasers is evaluated by comparing the two-state lasing behavior of the microdisks with that of edge-emitting stripe lasers made of the same epitaxial wafer.
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