Abstract
Crystallization of as-deposited amorphous Ge2Sb2Te5 films (180 nm) by femtosecond pulsed laser radiation have been studied using in-situ electrical resistance measurements with temporal resolution. The results show that a double pulses impact is optimal for the controllability of the crystallization process. In this case, the switching time of the film resistance is less than 100 ns and is associated with the formation of conducting crystalline paths in the material after the pulse laser impact. We have proposed a model of the electrical conductivity dynamics caused by impact of the ultrashort laser radiation, which is well related to experimental data.
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