Abstract
CuSbS2 is a promising absorber for thin film solar cells because of its suitable band gap, high absorption coefficient, low cost and nontoxic characteristics. Here we report CuSbS2 thin films fabricated from three-source co-evaporation for the first time. We used two-stage co-evaporation process in which Sb-rich precursor was first deposited by Cu, Sb and S co-evaporation at a lower substrate temperature (typically ∼ 230 °C) followed by Sb and S co-evaporation at a relatively elevated temperature (typically ∼ 370–390 °C). This process leads to an improved crystallinity and phase purity of CuSbS2. The phases of the deposited films are extremely sensitive to the substrate temperature and film composition. Excess of copper resulted in a separation of Cu12Sb4S13 secondary phase from CuSbS2, while excess of antimony resulted in a separation of Sb2S3. CuSbS2 films with good crystallinity and improved phase purity can be obtained at second stage substrate temperature of 370 °C. Finally a thin film solar cell was fabricated using stoichiometric CuSbS2 absorber with Mo/CuSbS2/CdS/ZnO/ZnO:Al/Ag structure, achieving an encouraging 1.9% power conversion efficiency with one of the highest open-circuit voltage of 526 mV for CuSbS2 solar cells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.