Abstract
Resonant two-photon structure is observed in the photo-Hall response of n-InSb at liquid helium temperatures. The number of two-phonon photo-excited carriers, directly determined from the photo-Hall effect, is seen to be proportional to the square of the incident laser intensity and to decay via a two-stage process. The low intensity and photo-excited carrier decay results are described using a three-level system involving the shallow donor impurity levels.
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