Two-dimensional transition metal sulfides for electrical applications

Abstract

In recent years, due to its unique layered structure and electrical properties, Graphene has attracted tremendous research attention. So far, the rapid pace of progress in graphene and the methodology developed in preparing ultrathin layers has led to exploration of other 2D materials, such as transition-metal sulfides (TMSs). Similar to their well-known cousin, graphene, TMSs exhibit many excellent properties, including the superior mechanical flexibility, impressive thermal stability, absence of dangling bonds and compatibility to silicon CMOS processes. More importantly, field-effect transistors (FETs) made from graphene cannot be effectively switched off and have low on/off switching ratios because graphene lacks a bandgap. In a distinct contrast to the bandgap issue of graphene, some of TMSs are semiconducting with a satisfied thickness-dependent bandgap, which can enable lots of fascinating device applications in FETs. This paper describes the basic structural properties, band structure and electrical properties of TMSs. Here, we focus on MoS2 as a typical example to introduce its applications in FETs, logic circuit, sensors and so on. Finally, the prospects for future advances in TMSs are briefly discussed.