Two-dimensional simulation of ion energy and angular distributions at the wafer in RF biased inductively coupled chlorine plasmas

Abstract

Summary form only given. We have previously developed a two-dimensional, electromagnetic, PIC-MCC code to study the ion energy and angular distributions in the RF biased sheaths. At the bulk-sheath boundary, the ion flux distribution into the sheath region can be specified from our two-dimensional fluid simulation. The electron flux into the sheath region is adjusted to satisfy the quasi-neutrality condition at every fixed time interval during the simulation. We presented simulation results of ion energy and angular distributions (IEDs and IADs), ion flux incident on the wafer, and self bias at the wafer as a function of the applied RF frequency, the amplitude of the RF bias for both helium and argon discharges (Hu et al., 2000). The IEDs calculated from particle simulations are in good agreement with analytic calculations. We have done similar particle simulations for chlorine discharges. Simulation results of IEDs and IADS at the wafer for Cl/sup +/, Cl/sub 2//sup +/ will be presented.