Abstract
As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.
Highlights
The discovery of monolayer silicon carbide will accelerate various technological innovations in the post-Moore era
This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties
Unlike graphene which can be exfoliated from bulk graphite via mechanical exfoliation, the synthesis of single-layer SiC is one of the most challenging and tricky syntheses among 2D materials, demanding deep understanding of the atomic structure of the bulk SiC and its crystal structures
Summary
The discovery of monolayer silicon carbide will accelerate various technological innovations in the post-Moore era. Unlike graphene, which is a pure one atom carbon material, 2D silicon carbide is a heteroatomic material that may exist in a variety of compositions and structures i.e., Six C y e.g., SiC, SiC3 , SiC7 , among others. The main challenge is that bulk SiC is not a layered van der Waals material. It is a covalently bonded material with sp bonding between carbon and silicon along the c axis. The formation of a monolayer silicon carbide requires phase transformation from sp to sp. The formation of a monolayer silicon carbide requires phase transformation from sp to sp2 These structural challenges lead to the following fundamental questions: How will hexagonal 2D SiC be isolated from the tetrahedrally coordinated bulk SiC if the top-down approach would be adopted?.
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