Abstract
Two-dimensional Born scattering for the non-relativistic case is considered, the purpose being to investigate electron transport properties in mono-layer Graphene subject to an applied parallel electric eld. Solutions for the Probability Density Current (PDC) are obtained in the Fresnel zone which provides a model for simulating the PDC subject to membrane crumpling. In this context a Random Fractal Defect Model is considered which is used to assess the eect of (Fractal) crumpling on the PDC.
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