Abstract
Structure and lasing characteristics of multiple quantum wire (QWR) GaAs/AlGaAs lasers grown by organometallic chemical vapor deposition (OMCVD) on V-grooved substrates are described. Two 4-QWR laser structures, each with a different wire-size, are compared. Peaks in the amplified spontaneous emission spectra, attributed to enhanced density of states at the QWR subbands, were observed in both structures. Subband separations of 16–20 meV for the smaller wires and 10–14 meV for the larger wires were measured, in agreement with the calculated values based on transmission electron microscopy cross sections of the QWR structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
