Abstract
Two-dimensional (2-D) potential profile of GaAs HEMT's under bias voltage has been successfully measured by combining Kelvin probe force microscopy with cleavage of the HEMT's. The spatial resolution evaluated by measuring GaAs-AlAs multiquantum-well structure was less than 70 nm. The measured depth profile of the potential shows a potential knee, which probably originates from the charge trapped at the interface between the epitaxial layer and the substrate. The high-field region is observed at the drain-side edge of the gate. The present KFM technique will yield a powerful tool for analysis of the electrical properties of the devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
