Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Xudong Wang,Peng Zhou,Dan Li,Jinglan Sun,Tie Lin,Yongguang Xiao,Jianlu Wang,Guangjian Wu,Xiangjian Meng,Yan Chen,Shuo Sun,Luqi Tu,Lei Liao,Hong Shen,Junhao Chu,Weida Hu,Minghua Tang

doi:10.1038/s41699-017-0040-4

Abstract

Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because of these circuits’ ultra-high power dissipation and because the conventional FETs cannot overcome the subthreshold swing (SS) limit of 60 mV/decade. In this work, the ordinary oxide of the FET is replaced only by a ferroelectric (Fe) polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)). Additionally, we employ a two-dimensional (2D) semiconductor, such as MoS2 and MoSe2, as the channel. This 2D Fe-FET achieves an ultralow SS of 24.2 mV/dec over four orders of magnitude in drain current at room temperature; this sub-60 mV/dec switching is derived from the Fe negative capacitance (NC) effect during the polarization of ferroelectric domain switching. Such 2D NC-FETs, realized by integrating of 2D semiconductors and organic ferroelectrics, provide a new approach to satisfy the requirements of next-generation low-energy-consumption integrated nanoelectronic circuits as well as the requirements of future flexible electronics.

Highlights

The development of integrated nanoelectronic devices together with the scaling down of field-effect transistors (FETs), has rendered energy consumption a nonnegligible factor for future electronics applications
We realize a 2D negative capacitance (NC)-FET based on the metal–ferroelectric–semiconductor (MFS) structure, in which the underlying Metal–oxide–semiconductor FETs (MOSFETs) as two separate circuit entities connected by a wire.[36]
We comprehensively investigated does the metal–ferroelectric– metal–insulator–semiconductor (MFMIS) device.[36] the thickness of ferroelectrics in these 2D negative capacitance FET (NC-FET), and an subthreshold swing (SS) of

Summary

Introduction

The development of integrated nanoelectronic devices together with the scaling down of field-effect transistors (FETs), has rendered energy consumption a nonnegligible factor for future electronics applications. We realize a 2D NC-FET based on the metal–ferroelectric–semiconductor (MFS) structure, in which the underlying MOSFET as two separate circuit entities connected by a wire.[36] Without this interlayer metal, an MFIS device can be achieved only if a ferroelectric and an insulation composite film are used as the gate dielectric.

Results

Conclusion