Abstract
The effect of stress induced defects on the ohmic region characteristics of short channel MOSFETs is analyzed by means of a two dimensional device simulator. The device aging is summarized in the formation of a narrow defective interface region whose nature, length and position above the channel are the parameters of our investigation. The channel conductance and transconductance degradations were found to be greatly influenced by the position of the defective region and its length. Also, fundamental differences were observed between the effects of interface states and fixed oxide charges. The interaction between the defective and defect‐free channel regions was found to produce a transconductance overshoot which attenuates the aging effects. Finally, a parameter extraction method based on a two‐piece analytical model of locally damaged MOSFETs is elaborated and validated by means of a 2‐D simulation.
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Schedule a callMore From: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
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