Abstract
A two-dimensional (2D) magnetic field sensor consisting of four silicon magnetic sensitive transistors (SMSTs) with similar characteristics is presented in this paper. By use of micro-electromechanical systems (MEMS) and integrated packaging technology, this sensor fabricated by using the silicon wafer with a <100> orientation and high resistivity, was packaged on printed circuit boards (PCBs). In order to detect the magnetic fields in the x and y axes directions, two of the four SMSTs with opposite magnetic sensitive directions were located along the x and −x axes directions, symmetrically, and the others were located along the y and −y axes directions. The experimental results show that when the VCE = 10.0 V and IB = 6.0 mA, the magnetic sensitivities of the sensor in the x and y axes directions are 366.0 mV/T and 365.0 mV/T, respectively. It is possible to measure the 2D magnetic field and improve the magnetic sensitivity, significantly.
Highlights
To the best of our knowledge, with the development of complementary metal-oxide-semiconductor (CMOS) and micro-electromechanical systems (MEMS) technology, magnetic field sensors have been applied in many different fields, such as in the detection of the Earth’s magnetic field and angular position, etc. [1,2,3]
In 2003, the silicon magnetic sensitive transistor (SMST) with a cubic structure was fabricated by MEMS technology [7,8], achieving a maximum relative magnetic sensitivity of about 22.7%/kG
In 2013, the SMSTs with a differential structure were fabricated by MEMS technology and achieved an absolute magnetic sensitivity of 102.9 mV/kG [9]
Summary
To the best of our knowledge, with the development of complementary metal-oxide-semiconductor (CMOS) and micro-electromechanical systems (MEMS) technology, magnetic field sensors have been applied in many different fields, such as in the detection of the Earth’s magnetic field and angular position, etc. [1,2,3]. In 2013, the SMSTs with a differential structure were fabricated by MEMS technology and achieved an absolute magnetic sensitivity of 102.9 mV/kG [9]. In 2015, a two-dimensional (2D) magnetic field sensor based on the operating principle and characteristics of the magnetic sensitive diode (MSD) was proposed [10], exhibiting sensitivities of SxB = 544 mV/T and SyB = 498 mV/T in the x and y directions, respectively. In view of the operating principle and characteristics of the SMST, a 2D magnetic field sensor composed of two differential structures with four SMSTs is proposed in this paper. Fields is significantly enhanced by using the differential structures and a referable uniform magnetic. Is significantly by using the differential structures and a referable uniform magnetic sensitivity is realized.
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